Transcend TS16MSD64V6G Ficha de datos

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T
T
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S
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M
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M
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G
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200PIN DDR266 Unbuffered SO-DIMM
128MB With 16Mx16 CL2.5
Description
The TS16MSD64V6G is a 16M x 64bits Double Data
Rate SDRAM high-density for DDR266.The
TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits
Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
packages, and a 2048 bits serial EEPROM on a 200-pin
printed circuit board. The TS16MSD64V6G is a Dual
In-Line Memory Module and is intended for mounting into
200-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ±0.2V
Max clock Freq: 133MHZ.
Double-data-rate architecture; two data transfers per
clock cycle
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transition with CK transition
Auto and Self Refresh 7.8us refresh interval.
Data I/O transactions on both edge of data strobe.
Edge aligned data output, center aligned data input.
Serial Presence Detect (SPD) with serial EEPROM
SSTL-2 compatible inputs and outputs.
MRS cycle with address key programs.
CAS Latency (Access from column address): 2.5
Burst Length (2,4,8 )
Data Sequence (Sequential & Interleave)
Placement
AB
D
E
C
F
G
H
I
J
K
PCB: 09-1180
Transcend Information Inc.
1
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Indice de contenidos

Pagina 1

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Description The TS16MSD64V6G is a 16M x 64bits Double Da

Pagina 2

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 SIMPLIFIED TRUTH TABLE (V=Valid, X=Don’t Care, H=Logic

Pagina 3

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Serial Presence Detect Specification Serial Presence Det

Pagina 4 - Block Diagram

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 72 Manufacturing Location T 54 54 53 31 36 4D 5344 36

Pagina 5

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Dimensions Side Millimeters Inches A 67.60 ± 0.200 2

Pagina 6 - for DQ,DQS and DM

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Pinouts: Pin No Pin Name Pin No Pin Name Pin No Pin N

Pagina 7 - Unit Note

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 Block Diagram A0~A12BA0,BA1DQ0~DQ15/RAS/CAS/WE/CSCKECK

Pagina 8

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit

Pagina 9

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 DC CHARACTERISTICS (Recommended operating condition unle

Pagina 10

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 AC OPERATING CONDITIONS Parameter Symbol Min Max Uni

Pagina 11 - Transcend Information Inc

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 AC Timing Parameters & Specifications (These AC char

Pagina 12

TTTSSS111666MMMSSSDDD666444VVV666GGG 200PIN DDR266 Unbuffered SO-DIMM128MB With 16Mx16 CL2.5 DQ & DM setup time to DQS tDS 0.5 ns DQ &

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