
T
T
T
S
S
S
3
3
3
2
2
2
M
M
M
L
L
L
S
S
S
6
6
6
4
4
4
V
V
V
8
8
8
D
D
D
2
2
2
168 PIN PC100 Unbuffered DIMM
256MB With 16M X8 CL2
Transcend information Inc
6
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV)
Parameter Symbol Min Max Unit
Address (A0 ~A11, BA0 ~BA1)
/RAS, /CAS, /WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
/CS (/CS0 ~ /CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
C
ADD
C
IN
C
CKE
C
CLK
C
C5
C
DQM
C
OUT
45
45
25
15
15
10
13
85
85
45
21
25
15
18
pF
pF
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter Symbol Test Condition Value Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
tRC≥tRC(min)
I
O=0mA
1,120 mA 1
ICC2P CKE≤VIL(max), tCC=10ns 16
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK≤VIL(max), tCC=∞
16
mA
ICC2N
CKE≥VIH(min), /CS≥VIH(min), tCC=10ns
Input signals are changed one time during 20ns
320
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE≥V
IH(min), CLK≤VIL(max), tCC=∞
Input signals are stable
112
mA
ICC3P CKE≤VIL(max), tCC=10ns 80
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK≤V
IL(max), tCC=∞
80
mA
ICC3N
CKE≥VIH(min), /CS≥VIH(min), tCC=10s
Input signals are changed one time during 20ns
480
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE≥V
IH(min), CLK≤VIL(max), tCC=∞
Input signals are stable
320
mA
Operating Current
(Bust Mode)
I
CC4
IOL= 0 mA
Page Burst
4 Banks activated
tcc
D = 2CLKs
1,440 mA 1
Refresh Current ICC5 tRC≥tRC(min) 2,000 mA 2
2 24
Self Refresh Current ICC6 CKE≤0.2V
3 -
mA
Note:
1. Measured with outputs open.
2. Refresh period is 64ms
3. Unless otherwise noted, input swing level is CMOS (VIH/VIL=VDDQ/VSSQ)
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